| PART |
Description |
Maker |
| IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| BUK854-800A |
Insulated Gate Bipolar Transistor IGBT 12 A, 800 V, N-CHANNEL IGBT, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NGTG50N60FLWG |
Insulated Gate Bipolar Transistor (IGBT)
|
ON Semiconductor
|
| NGTG30N60FWG |
Insulated Gate Bipolar Transistor (IGBT)
|
ON Semiconductor
|
| GB75DA120UP |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A
|
Vishay Siliconix
|
| GT40T302 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| IRG4PC30FPBF |
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
International Rectifier
|
| GT15J121 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT10.DA60U |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
|
Vishay Siliconix
|
| IRG4PC30UPBF |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
|
International Rectifier
|
